机械应变下的石墨烯纳米带。
Graphene nanoribbons under mechanical strain.
机构信息
Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California, 94305, USA; Key Laboratory for Thin Film and Micro fabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, PR China.
出版信息
Adv Mater. 2015 Jan 14;27(2):303-9. doi: 10.1002/adma.201403750. Epub 2014 Oct 29.
Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
采用具有高度光滑边缘的单轴应变引入到单个石墨烯纳米带（GNRs）中，以研究应变对 GNRs 的拉曼光谱和电性能的影响。结果发现，单轴应变线性地向下移动 GNRs 的拉曼 G 带频率，并以非单调的方式显著调谐其带隙。GNRs 的应变工程有望在潜在的电子和光子学应用中得到应用。
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