Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190 (P.R. China).
Angew Chem Int Ed Engl. 2014 Dec 22;53(52):14326-51. doi: 10.1002/anie.201310803. Epub 2014 Nov 5.
C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications.
C(sp(3) )C 键合金刚石纳米线是宽带隙半导体，具有优异的综合性能，如负电子亲和势、化学惰性、高杨氏模量、最高硬度和室温热导率。具有大的比表面积增强的一维金刚石纳米线的制造使得能够控制和增强金刚石的基本性能。尽管与碳纳米管的理论比较表明，金刚石纳米线在能量和力学上是可行的结构，但可重复地合成晶态金刚石纳米线仍然具有挑战性。我们对金刚石纳米线进行了全面的、最新的综述，包括对其合成以及结构、性能和应用的讨论。
