Yeh Mu-Shih, Wu Yung-Chun, Liu Kuan-Cheng, Chung Ming-Hsien, Jhan Yi-Ruei, Hung Min-Feng, Chen Lun-Chun
Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
Nanoscale Res Lett. 2014 Nov 6;9(1):603. doi: 10.1186/1556-276X-9-603. eCollection 2014.
This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.
这项工作展示了一种适用于一次性编程（OTP）非易失性存储器（NVM）应用的可行的单多晶硅全栅环绕（GAA）无结鳍式场效应晶体管（JL-FinFET）。该器件的优点包括使用简单，且易于嵌入硅晶圆、玻璃和柔性衬底中。该器件具有出色的保持特性，在10⁴秒后记忆窗口保持2V。通过外推法可知，95%的原始电荷可存储10年。未来，该器件将应用于面板上的全功能系统、有源矩阵液晶显示器和三维（3D）堆叠闪存中的多层硅集成电路。
