Kuznetsov Sergey N, Cheremisin Alexander B, Stefanovich Genrikh B
Physico-Technical Department, Petrozavodsk State University, Lenin av. 33, 185910 Petrozavodsk, Russian Federation.
Nanoscale Res Lett. 2014 Nov 13;9(1):612. doi: 10.1186/1556-276X-9-612. eCollection 2014.
We have proposed a method to probe metal to insulator transition in VO2 measuring photoluminescence response of colloidal quantum dots deposited on the VO2 film. In addition to linear luminescence intensity decrease with temperature that is well known for quantum dots, temperature ranges with enhanced photoluminescence changes have been found during phase transition in the oxide. Corresponding temperature derived from luminescence dependence on temperature closely correlates with that from resistance measurement during heating. The supporting reflectance data point out that photoluminescence response mimics a reflectance change in VO2 across metal to insulator transition. Time-resolved photoluminescence study did not reveal any significant change of luminescence lifetime of deposited quantum dots under metal to insulator transition. It is a strong argument in favor of the proposed explanation based on the reflectance data.
71.30. + h; 73.21.La; 78.47.jd.
我们提出了一种通过测量沉积在VO₂薄膜上的胶体量子点的光致发光响应来探测VO₂中金属-绝缘体转变的方法。除了量子点众所周知的随温度线性降低发光强度外，在氧化物的相变过程中还发现了光致发光变化增强的温度范围。由发光对温度的依赖性得出的相应温度与加热过程中电阻测量得出的温度密切相关。辅助反射率数据表明，光致发光响应在VO₂从金属到绝缘体转变过程中模拟了反射率变化。时间分辨光致发光研究未发现沉积的量子点在金属-绝缘体转变下发光寿命有任何显著变化。这有力地支持了基于反射率数据提出的解释。
71.30. + h；73.21.La；78.47.jd。
