Dong Jing-Jing, Hao Hui-Ying, Xing Jie, Fan Zhen-Jun, Zhang Zi-Li
School of Science, China University of Geosciences (Beijing), 29 Xue Yuan Road, Haidian District, Beijing, 100083, China.
Nanoscale Res Lett. 2014 Nov 25;9(1):630. doi: 10.1186/1556-276X-9-630. eCollection 2014.
Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on.
78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.
通过引入石墨烯作为电流扩展层制备了有序的氧化锌纳米棒阵列/p-氮化镓异质结发光二极管(LED),与使用传统结构(氧化铟锡作为电流扩展层)的LED相比,其电致发光性能得到了改善。此外,通过调整所用氧化锌纳米棒阵列的直径,氧化锌纳米棒阵列/p-氮化镓异质结LED的发光进一步增强。这项工作在固态照明、高性能光电器件等方面具有巨大的潜在应用。
78.60.Fi;85.60.Jb;78.67.Lt;81.10.Dn。