• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

具有石墨烯电流扩展层的有序ZnO纳米棒阵列/p-GaN发光二极管的电致发光

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.

作者信息

Dong Jing-Jing, Hao Hui-Ying, Xing Jie, Fan Zhen-Jun, Zhang Zi-Li

机构信息

School of Science, China University of Geosciences (Beijing), 29 Xue Yuan Road, Haidian District, Beijing, 100083, China.

出版信息

Nanoscale Res Lett. 2014 Nov 25;9(1):630. doi: 10.1186/1556-276X-9-630. eCollection 2014.

DOI:10.1186/1556-276X-9-630
PMID:25489284
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4257526/
Abstract

UNLABELLED

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on.

PACS

78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.

摘要

无标签

通过引入石墨烯作为电流扩展层制备了有序的氧化锌纳米棒阵列/p-氮化镓异质结发光二极管(LED),与使用传统结构(氧化铟锡作为电流扩展层)的LED相比,其电致发光性能得到了改善。此外,通过调整所用氧化锌纳米棒阵列的直径,氧化锌纳米棒阵列/p-氮化镓异质结LED的发光进一步增强。这项工作在固态照明、高性能光电器件等方面具有巨大的潜在应用。

物理和天文学分类号

78.60.Fi;85.60.Jb;78.67.Lt;81.10.Dn。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/f2a18a76e63d/1556-276X-9-630-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/00ecd7fe745b/1556-276X-9-630-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/38b4932bfe34/1556-276X-9-630-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/fbc7af509372/1556-276X-9-630-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/f2a18a76e63d/1556-276X-9-630-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/00ecd7fe745b/1556-276X-9-630-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/38b4932bfe34/1556-276X-9-630-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/fbc7af509372/1556-276X-9-630-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac48/4257526/f2a18a76e63d/1556-276X-9-630-4.jpg

相似文献

1
Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.具有石墨烯电流扩展层的有序ZnO纳米棒阵列/p-GaN发光二极管的电致发光
Nanoscale Res Lett. 2014 Nov 25;9(1):630. doi: 10.1186/1556-276X-9-630. eCollection 2014.
2
The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.使用 n-ZnO/NiO/p-GaN 异质结制备具有增强发光性能的白光发光二极管。
Nanoscale Res Lett. 2013 Jul 13;8(1):320. doi: 10.1186/1556-276X-8-320.
3
Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes.混合氧化锌微网和纳米棒阵列对光传输的增强及其在氮化镓基发光二极管中的应用
Opt Express. 2013 Nov 18;21(23):28531-42. doi: 10.1364/OE.21.028531.
4
Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.整体式无机 ZnO/GaN 半导体异质结白光发光二极管。
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3761-3768. doi: 10.1021/acsami.7b15946. Epub 2018 Jan 22.
5
Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.等离子体增强 ZnO 纳米棒阵列/ p-GaN 异质结构器件的电致发光。
Sci Rep. 2016 May 16;6:25645. doi: 10.1038/srep25645.
6
Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices.在 ZnO 涂层石墨烯层上生长的可转移 GaN 层,用于光电器件。
Science. 2010 Oct 29;330(6004):655-7. doi: 10.1126/science.1195403.
7
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film.室温下氧化锌薄膜的大规模高度有序纳米棒印记
Opt Express. 2013 Nov 4;21(22):26846-53. doi: 10.1364/OE.21.026846.
8
Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes.用于颜色可调异质结发光二极管的在p型氮化镓薄膜上热液生长铟掺杂氧化锌纳米棒
Sci Rep. 2015 May 19;5:10410. doi: 10.1038/srep10410.
9
The fabrication of a patterned ZnO nanorod array for high brightness LEDs.用于高亮度 LED 的图案化 ZnO 纳米棒阵列的制造。
Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304. Epub 2010 Aug 6.
10
Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer.具有还原氧化石墨烯电流扩展层的氮化镓基发光二极管的制备及其特性
ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22451-6. doi: 10.1021/am506308t. Epub 2014 Dec 4.

本文引用的文献

1
Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity.选择性区域生长具有可控极性的有序 ZnO 纳米线阵列。
ACS Nano. 2014 May 27;8(5):4761-70. doi: 10.1021/nn500620t. Epub 2014 Apr 18.
2
p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.p-GaN/n-ZnO 异质结纳米线:光电性能及界面极性的作用。
ACS Nano. 2014 May 27;8(5):4376-84. doi: 10.1021/nn406134e. Epub 2014 Apr 23.
3
Controllable growth of highly ordered ZnO nanorod arrays via inverted self-assembled monolayer template.
通过反相自组装单分子层模板可控生长高度有序的 ZnO 纳米棒阵列。
ACS Appl Mater Interfaces. 2011 Nov;3(11):4388-95. doi: 10.1021/am2010288. Epub 2011 Oct 13.
4
Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.在 p-GaN 层上的 ZnO 纳米线发光阵列的低温电致发光特性。
Opt Lett. 2010 Dec 15;35(24):4109-11. doi: 10.1364/OL.35.004109.
5
Ordered nanowire array blue/near-UV light emitting diodes.有序纳米线阵列蓝色/近紫外发光二极管。
Adv Mater. 2010 Nov 9;22(42):4749-53. doi: 10.1002/adma.201002134.
6
The fabrication of a patterned ZnO nanorod array for high brightness LEDs.用于高亮度 LED 的图案化 ZnO 纳米棒阵列的制造。
Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304. Epub 2010 Aug 6.
7
Roll-to-roll production of 30-inch graphene films for transparent electrodes.卷对卷生产 30 英寸的用于透明电极的石墨烯薄膜。
Nat Nanotechnol. 2010 Aug;5(8):574-8. doi: 10.1038/nnano.2010.132. Epub 2010 Jun 20.
8
Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes.基于ZnO纳米线阵列/p-GaN发光二极管的低压紫外电致发光
Adv Mater. 2010 Aug 10;22(30):3298-302. doi: 10.1002/adma.201000611.
9
High-quality ZnO nanowire arrays directly fabricated from photoresists.直接由光刻胶制备的高质量氧化锌纳米线阵列
ACS Nano. 2009 Jan 27;3(1):53-8. doi: 10.1021/nn800527m.
10
ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting diodes.插入氧化锌纳米线的氮化镓/氧化锌异质结发光二极管。
Small. 2007 Apr;3(4):568-72. doi: 10.1002/smll.200600479.