Department of Physical Electronics, School of Electrical Engineering, Tel-Aviv University , Ramat-Aviv 69978, Israel.
Nano Lett. 2015 Jan 14;15(1):481-5. doi: 10.1021/nl503809c. Epub 2014 Dec 15.
Quantized conductance in nanowires can be observed at low temperature in transport measurements; however, the observation of sub-bands at room temperature is challenging due to temperature broadening. So far, conduction band splitting at room temperature has not been observed in III-V nanowires mainly due to the small energetic separations between the sub-bands. We report on the measurement of conduction sub-bands at room temperature, in single InAs nanowires, using Kelvin probe force microscopy. This method does not rely on charge transport but rather on measurement of the nanowire Fermi level position as carriers are injected into a single nanowire transistor. As there is no charge transport, electron scattering is no longer an issue, allowing the observation of the sub-bands at room temperature. We measure the energy of the sub-bands in nanowires with two different diameters, and obtain excellent agreement with theoretical calculations based on an empirical tight-binding model.
在低温下的输运测量中可以观察到纳米线中的量子电导;然而,由于温度展宽,在室温下观察子带是具有挑战性的。到目前为止,由于子带之间的能量分离较小,III-V 纳米线中尚未观察到室温下的导带分裂。我们报告了使用 Kelvin 探针力显微镜在单个 InAs 纳米线中室温下测量导带子带的情况。该方法不依赖于电荷输运,而是依赖于测量载流子注入单个纳米线晶体管时纳米线费米能级的位置。由于没有电荷输运,电子散射不再是一个问题,从而可以在室温下观察子带。我们测量了两种不同直径的纳米线中子带的能量,并与基于经验紧束缚模型的理论计算得到了很好的一致。