Austrian Academy of Sciences , Dr. Ignaz Seipel-Platz 2, 1010 Vienna, Austria.
Nano Lett. 2017 Aug 9;17(8):4556-4561. doi: 10.1021/acs.nanolett.7b00425. Epub 2017 Jul 28.
Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.
室温下的电导量子化是利用弹道输运的关键要求，例如，用于在上限“导通”状态电导或多值逻辑门中运行的高性能、低功耗晶体管。到目前为止，研究电导量子化一直限于超低温度下的高迁移率材料，并且需要复杂的纳米结构形成技术和精密的光刻技术来形成接触。利用单晶 Ge 纳米线和 Al 衬底之间的热诱导交换反应，我们实现了具有超小 Ge 段的单片 Al-Ge-Al NW 异质结构，这些 Ge 段由自对准准一维晶态 Al 引线接触。通过集成在静电调制背栅场效应晶体管中，我们首次实验观察到 Ge 中的室温量子弹道输运，有利于集成在互补金属氧化物半导体平台技术中。
