Nguyen Lien, Hang Mimi, Wang Wanxin, Tian Ye, Wang Liming, McCarthy Thomas J, Chen Wei
Chemistry Department, Mount Holyoke College , 50 College Street, South Hadley, Massachusetts 01075, United States.
ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22876-83. doi: 10.1021/am507152d. Epub 2014 Dec 15.
Three types of commercially derived methylsilicone materials, Sylgard-184, Q(V)Q(H) (an MQ-based silicone containing no dimethylsiloxane, D units), and D(V)D(H) (a D-based silicone with no additives), were judiciously chosen to study the conditions under which long-lasting hydrophilicity after oxygen plasma treatment can be obtained. A 30 s plasma treatment time under controlled conditions was found to be optimal in terms of achieving the lowest initial advancing and receding contact angles of θ(A)/θ(R) = 10°/5° with undetectable surface damage. Vacuum treatment, a necessary step prior to plasma ignition that has been overlooked in previous studies, as well as room temperature curing were explored as means to remove low molecular weight species. For thin films (a few micrometers), 40 min vacuum treatment was sufficient to achieve low dynamic contact angles of θ(A)/θ(R) = 51-56°/38-43° on all three types of silicones measured more than 30 days after the plasma treatments. These values indicate superior hydrophilicity relative to what has been reported. The small and slow rise in contact angle over time is likely caused by the intrinsic nature of the silicone materials, i.e., surface reorientation of hydrophilic functional groups to the bulk and condensation of surface silanol groups, and is thus unavoidable. For thick films (∼1 mm), room temperature curing in addition to vacuum treatment was required to reduce hydrophobic recovery and to achieve long-lasting hydrophilicity. The final contact angles for thick samples were slightly higher than the corresponding thin film samples due to the greater "reservoir" depth and migration length for mobile species. In particular, Sylgard exhibited inferior performance among the thick samples, and we attribute this to the additives in its commercial formulation. Furthermore, unlike polydimethylsiloxane-based silicones, Q(V)Q(H) does not contain equilibration products of the Dn-type; its thin films perform as well as those of Sylgard and D(V)D(H). Silicones without D units are promising materials with intrinsically low hydrophobic recovery characteristics and long-lasting hydrophilicity after oxygen plasma treatment.
我们精心挑选了三种商业来源的甲基硅氧烷材料,即Sylgard-184、Q(V)Q(H)(一种不含二甲基硅氧烷D单元的MQ基硅氧烷)和D(V)D(H)(一种无添加剂的D基硅氧烷),以研究在何种条件下氧等离子体处理后能获得持久的亲水性。发现在受控条件下30秒的等离子体处理时间是最佳的,此时能实现最低的初始前进接触角和后退接触角,θ(A)/θ(R)=10°/5°,且表面无明显损伤。真空处理作为等离子体点火前的必要步骤,在以往研究中常被忽视,同时还探讨了室温固化作为去除低分子量物质的方法。对于薄膜(几微米厚),40分钟的真空处理足以在等离子体处理30多天后,使所有三种类型的硅氧烷的动态接触角达到θ(A)/θ(R)=51 - 56°/38 - 43°。这些值表明其亲水性优于已报道的情况。接触角随时间的缓慢小幅上升可能是由硅氧烷材料的固有性质引起的,即亲水性官能团向本体的表面重新取向以及表面硅醇基团的缩合,因此是不可避免的。对于厚膜(约1毫米),除了真空处理外,还需要室温固化以减少疏水恢复并实现持久的亲水性。由于移动物种的“储存库”深度和迁移长度更大,厚样品的最终接触角略高于相应的薄膜样品。特别是,Sylgard在厚样品中表现较差,我们将此归因于其商业配方中的添加剂。此外,与聚二甲基硅氧烷基硅氧烷不同,Q(V)Q(H)不包含Dn型平衡产物;其薄膜的性能与Sylgard和D(V)D(H)的薄膜相当。不含D单元的硅氧烷是有前途的材料,具有固有的低疏水恢复特性和氧等离子体处理后的持久亲水性。