Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
ACS Nano. 2015 Jan 27;9(1):969-77. doi: 10.1021/nn506806b. Epub 2015 Jan 2.
Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.
基于中等或大直径碳纳米管 (CNT) 的场效应晶体管 (FET) 通常存在双极性行为、较大的关态电流和较小的电流导通/关断比，这对于数字电子学来说是非常不理想的。为了克服这些问题，设计并测试了一种反馈门 (FBG) FET 结构。与普通的顶栅 FET 不同，这种 FBG FET 增加了一个额外的反馈门，该门直接连接到 FET 的漏极。实验证明，基于直径为 1.5nm 的半导体 CNT 的 FBG FET 可能具有约 1×10(-13)A 的低关态电流、大于 1×10(8)的高电流导通/关断比、可忽略的漏极诱导关态泄漏电流，以及在大源漏偏压和室温下良好的亚阈值摆幅为 75mV/DEC。FBG 结构有望用于 CNT FET 以满足低静态功率逻辑电子应用的标准，也可用于构建使用其他小带隙半导体的 FET 以抑制泄漏电流。
