Semiconductor Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, 09107 Chemnitz, Germany.
Material Systems for Nanoelectronics, Technische Universität Chemnitz, Reichenhainer Straße 70, 09107 Chemnitz, Germany ; Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
Beilstein J Nanotechnol. 2014 Nov 11;5:2070-8. doi: 10.3762/bjnano.5.215. eCollection 2014.
The optical and electrical properties of terbium(III) bis(phthalocyanine) (TbPc2) films on cobalt substrates were studied using variable angle spectroscopic ellipsometry (VASE) and current sensing atomic force microscopy (cs-AFM). Thin films of TbPc2 with a thickness between 18 nm and 87 nm were prepared by organic molecular beam deposition onto a cobalt layer grown by electron beam evaporation. The molecular orientation of the molecules on the metallic film was estimated from the analysis of the spectroscopic ellipsometry data. A detailed analysis of the AFM topography shows that the TbPc2 films consist of islands which increase in size with the thickness of the organic film. Furthermore, the cs-AFM technique allows local variations of the organic film topography to be correlated with electrical transport properties. Local current mapping as well as local I-V spectroscopy shows that despite the granular structure of the films, the electrical transport is uniform through the organic films on the microscale. The AFM-based electrical measurements allow the local charge carrier mobility of the TbPc2 thin films to be quantified with nanoscale resolution.
采用变角度光谱椭圆偏振法(VASE)和电流感应原子力显微镜(cs-AFM)研究了钴衬底上的铽(III)双(酞菁)(TbPc2)薄膜的光电性质。通过电子束蒸发生长的钴层上的有机分子束沉积,制备了厚度在 18nm 到 87nm 之间的 TbPc2 薄膜。从光谱椭圆偏振数据分析中估计了分子在金属膜上的分子取向。对 AFM 形貌的详细分析表明,TbPc2 薄膜由岛组成,随着有机膜厚度的增加,岛的尺寸也会增加。此外,cs-AFM 技术允许将有机膜形貌的局部变化与电输运性质相关联。局部电流映射和局部 I-V 光谱表明,尽管薄膜具有粒状结构,但在微尺度上,有机膜中的电输运是均匀的。基于 AFM 的电测量允许以纳米级分辨率量化 TbPc2 薄膜的局部载流子迁移率。