Ma Hong-Ping, Lu Hong-Liang, Yang Jia-He, Li Xiao-Xi, Wang Tao, Huang Wei, Yuan Guang-Jie, Komarov Fadei F, Zhang David Wei
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai 201800, China.
Nanomaterials (Basel). 2018 Dec 5;8(12):1008. doi: 10.3390/nano8121008.
In this study, silicon nitride (SiN) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiN film.
在本研究中，通过等离子体增强原子层沉积法在硅（100）衬底上精确沉积了具有不同氧浓度的氮化硅（SiN）薄膜（即SiON薄膜）。因此，能够比较研究氧浓度对薄膜性能的影响，并获得了各种有价值的结果。具体而言，利用X射线反射率、X射线光电子能谱、原子力显微镜和光谱椭偏仪对SiON薄膜的微观结构、光学和电学性能进行了系统表征。实验结果表明，随着氧浓度降低，表面粗糙度从0.13增加到0.2nm。SiON薄膜的折射率随着氧浓度降低从1.55增加到1.86。相应地，通过氧1s峰分析确定的这些薄膜的带隙能量从6.2降低到4.8eV。此外，I-V测试表明，对于薄膜中较高的氧浓度，该薄膜表现出较低的漏电流和更好的绝缘性能。这些结果表明，氧会影响所制备的SiN薄膜的微观结构、光学和电学性能。
