Casadei Alberto, Llado Esther Alarcon, Amaduzzi Francesca, Russo-Averchi Eleonora, Rüffer Daniel, Heiss Martin, Dal Negro Luca, Fontcuberta i Morral Anna
Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
1] Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Marys Street, Boston, MA, 02215, USA [2] Division of Materials Science and Engineering, Boston University, 15 Saint Marys Street, Brookline, MA 02446, USA.
Sci Rep. 2015 Jan 7;5:7651. doi: 10.1038/srep07651.
Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization dependence in light absorption and emission. In the past, metal nanostructures have been shown to have the ability to modify and enhance the light response of nanoscale objects. Here we demonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie antennas is able to modify the polarization response of a nanowire. As a result, the increase in light absorption for transverse polarized light changes the nanowire polarization response, including the polarization response inversion. This work will open a new path towards the widespread implementation of nanowires applications such as in photodetection, solar energy harvesting and light emission.
由于半导体纳米线与光的特殊相互作用，它们在光子学、量子光学和太阳能收集领域开辟了新途径。其全面技术应用的主要挑战之一是它们在光吸收和发射方面对偏振的强烈依赖性。过去，已证明金属纳米结构有能力改变和增强纳米级物体的光响应。在此，我们证明由具有高密度蝴蝶结天线阵列的砷化镓纳米线形成的混合结构能够改变纳米线的偏振响应。结果，横向偏振光的光吸收增加改变了纳米线的偏振响应，包括偏振响应反转。这项工作将为纳米线应用的广泛实施开辟一条新途径，如在光电探测、太阳能收集和发光领域。
