Growth of highly conducting MoSN thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application.

High-quality growth of MoSN films is realized on single-crystal -AlO substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporation of covalently bonded N-doping in MoS lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH shows ∼80% 1T' phase. The transport measurements performed on MoSN films deposited at 300 mTorr NH display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoSN film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS. Device architecture, p-type N doping in MoS lattice, favorably increased work-function, multiphasic component of MoS, and increased surface roughness synergistically contribute to superior TENG performance.