Parmar Swati, Prajesh Neetu, Wable Minal, Choudhary Ram Janay, Gosavi Suresh, Boomishankar Ramamoorthy, Ogale Satishchandra
Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India.
Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India.
iScience. 2022 Feb 10;25(3):103898. doi: 10.1016/j.isci.2022.103898. eCollection 2022 Mar 18.
High-quality growth of MoSN films is realized on single-crystal -AlO substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporation of covalently bonded N-doping in MoS lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH shows ∼80% 1T' phase. The transport measurements performed on MoSN films deposited at 300 mTorr NH display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoSN film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS. Device architecture, p-type N doping in MoS lattice, favorably increased work-function, multiphasic component of MoS, and increased surface roughness synergistically contribute to superior TENG performance.
通过在氨气氛中采用脉冲激光沉积（PLD）技术，在单晶-AlO衬底上实现了高质量的MoSN薄膜生长，从而获得了高度稳定且可调节的1T'/2H双相结构。拉曼光谱表明，由于在MoS晶格中引入了共价键合的N掺杂，导致1T'相成分系统性增强，并产生了压缩应变。有趣的是，在300 mTorr NH下沉积的薄膜显示出约80%的1T'相。对在300 mTorr NH下沉积的MoSN薄膜进行的输运测量表明，其室温电阻率非常低，仅为0.03 mΩ·cm，比在类似条件下生长的未掺杂MoS增强了100倍。一种以双相MoSN薄膜作为电子受体的摩擦纳米发电机（TENG）器件，与原始MoS相比，其输出电压有明显提高。器件结构、MoS晶格中的p型N掺杂、有利地增加的功函数、MoS的多相成分以及增加的表面粗糙度协同作用，共同促成了优异的TENG性能。
