Domiciano Gisele Pereira, Cacique Isaías Severino, Chagas Freitas Cecília, Filippi Marta Cristina Corsi, DaMatta Fábio Murilo, do Vale Francisco Xavier Ribeiro, Rodrigues Fabrício Ávila
First, second, third, sixth, and seventh authors: Universidade Federal de Viçosa (UFV), Departamento de Fitopatologia, Laboratório da Interação Planta-Patógeno, Viçosa, MG, 36570-900, Brazil; fourth author: EMBRAPA-National Research Center for Rice and Beans, Plant Pathology Section, Santo Antônio de Goiás, GO, 75375-000, Brazil; fifth author: UFV, Departamento de Biologia Vegetal, Brazil.
Phytopathology. 2015 Jun;105(6):738-47. doi: 10.1094/PHYTO-10-14-0280-R. Epub 2015 Jun 4.
Rice blast, caused by Pyricularia oryzae, is the most important disease in rice worldwide. This study investigated the effects of silicon (Si) on the photosynthetic gas exchange parameters (net CO2 assimilation rate [A], stomatal conductance to water vapor [gs], internal-to-ambient CO2 concentration ratio [Ci/Ca], and transpiration rate [E]); chlorophyll fluorescence a (Chla) parameters (maximum photochemical efficiency of photosystem II [Fv/Fm], photochemical [qP] and nonphotochemical [NPQ] quenching coefficients, and electron transport rate [ETR]); concentrations of pigments, malondialdehyde (MDA), and hydrogen peroxide (H2O2); and activities of superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), glutathione reductase (GR), and lypoxigenase (LOX) in rice leaves. Rice plants were grown in a nutrient solution containing 0 or 2 mM Si (-Si or +Si, respectively) with and without P. oryzae inoculation. Blast severity decreased with higher foliar Si concentration. The values of A, gs and E were generally higher for the +Si plants in comparison with the -Si plants upon P. oryzae infection. The Fv/Fm, qp, NPQ, and ETR were greater for the +Si plants relative to the -Si plants at 108 and 132 h after inoculation (hai). The values for qp and ETR were significantly higher for the -Si plants in comparison with the +Si plants at 36 hai, and the NPQ was significantly higher for the -Si plants in comparison with the +Si plants at 0 and 36 hai. The concentrations of Chla, Chlb, Chla+b, and carotenoids were significantly greater in the +Si plants relative to the -Si plants. For the -Si plants, the MDA and H2O2 concentrations were significantly higher than those in the +Si plants. The LOX activity was significantly higher in the +Si plants than in the -Si plants. The SOD and GR activities were significantly higher for the -Si plants than in the +Si plants. The CAT and APX activities were significantly higher in the +Si plants than in the -Si plants. The supply of Si contributed to a decrease in blast severity, improved the gas exchange performance, and caused less dysfunction at the photochemical level.
由稻瘟病菌引起的稻瘟病是全球水稻最重要的病害。本研究调查了硅(Si)对水稻叶片光合气体交换参数(净二氧化碳同化率[A]、气孔导度[gs]、胞间二氧化碳浓度与外界二氧化碳浓度之比[Ci/Ca]以及蒸腾速率[E]);叶绿素荧光a(Chla)参数(光系统II的最大光化学效率[Fv/Fm]、光化学猝灭系数[qP]和非光化学猝灭系数[NPQ]以及电子传递速率[ETR]);色素、丙二醛(MDA)和过氧化氢(H2O2)的浓度;以及超氧化物歧化酶(SOD)、过氧化氢酶(CAT)、抗坏血酸过氧化物酶(APX)、谷胱甘肽还原酶(GR)和脂氧合酶(LOX)活性的影响。水稻植株在含有0或2 mM硅(分别为-Si或+Si)的营养液中生长,并接种或不接种稻瘟病菌。稻瘟病严重程度随叶片硅浓度升高而降低。在感染稻瘟病菌后,+Si植株的A、gs和E值通常高于-Si植株。接种后108和132小时,+Si植株的Fv/Fm、qp、NPQ和ETR相对于-Si植株更高。接种后36小时,-Si植株的qp和ETR值显著高于+Si植株,接种后0和36小时,-Si植株的NPQ显著高于+Si植株。+Si植株中叶绿素a、叶绿素b、叶绿素a+b和类胡萝卜素的浓度显著高于-Si植株。对于-Si植株,MDA和H2O2浓度显著高于+Si植株。+Si植株的脂氧合酶活性显著高于-Si植株。-Si植株的SOD和GR活性显著高于+Si植株。+Si植株的CAT和APX活性显著高于-Si植株。硅的供应有助于降低稻瘟病严重程度,改善气体交换性能,并减少光化学水平的功能障碍。