Solís-Fernández Pablo, Bissett Mark A, Tsuji Masaharu, Ago Hiroki
Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, Kasuga, Fukuoka 816-8580, Japan.
Nanoscale. 2015 Feb 28;7(8):3572-80. doi: 10.1039/c4nr07007k.
We demonstrate the controlled tuning of the electronic band structure of large-arrays of graphene nanoribbons (GNRs) by chemical functionalization. The GNR arrays are synthesized by substrate-controlled metal-assisted etching of graphene in H2 at high temperature, and functionalized with different molecules. From Raman spectroscopy and carrier transport measurements, we found that 4-nitrobenzenediazonium (4-NBD) and diethylene triamine (DETA) molecules can tune the doping level of the GNR arrays to p- and n-type, respectively. In both cases, the doping effects induced in the GNRs were found to be higher than for a pristine graphene sheet, due to the presence of a large quantity of edges. Effects of chemical doping on the Raman spectrum of sp(2) carbon materials are also discussed. Our findings offer an effective way to control the electronic structure of GNRs by chemical functionalization, and are expected to facilitate the production of nanoribbon-based p-n junctions for future implementation into electronic circuits.
我们展示了通过化学官能化对大面积石墨烯纳米带（GNR）阵列的电子能带结构进行可控调节。GNR阵列是通过在高温下氢气中基于衬底控制的金属辅助蚀刻石墨烯合成的，并用不同分子进行官能化。通过拉曼光谱和载流子输运测量，我们发现4-硝基苯重氮盐（4-NBD）和二乙烯三胺（DETA）分子可分别将GNR阵列的掺杂水平调节为p型和n型。在这两种情况下，由于存在大量边缘，发现GNR中诱导的掺杂效应高于原始石墨烯片。还讨论了化学掺杂对sp(2)碳材料拉曼光谱的影响。我们的研究结果提供了一种通过化学官能化控制GNR电子结构的有效方法，预计将有助于生产基于纳米带的p-n结，以便未来应用于电子电路。
