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石墨烯/聚合物体系亚微米级的应力传递机制

Stress transfer mechanisms at the submicron level for graphene/polymer systems.

作者信息

Anagnostopoulos George, Androulidakis Charalampos, Koukaras Emmanuel N, Tsoukleri Georgia, Polyzos Ioannis, Parthenios John, Papagelis Konstantinos, Galiotis Costas

机构信息

Institute of Chemical Engineering Sciences, Foundation for Research and Technology-Hellas (FORTH/ICE-HT) , P.O. Box 1414, Patras 265 04, Greece.

出版信息

ACS Appl Mater Interfaces. 2015 Feb 25;7(7):4216-23. doi: 10.1021/am508482n. Epub 2015 Feb 16.

DOI:10.1021/am508482n
PMID:25644121
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4370368/
Abstract

The stress transfer mechanism from a polymer substrate to a nanoinclusion, such as a graphene flake, is of extreme interest for the production of effective nanocomposites. Previous work conducted mainly at the micron scale has shown that the intrinsic mechanism of stress transfer is shear at the interface. However, since the interfacial shear takes its maximum value at the very edge of the nanoinclusion it is of extreme interest to assess the effect of edge integrity upon axial stress transfer at the submicron scale. Here, we conduct a detailed Raman line mapping near the edges of a monolayer graphene flake that is simply supported onto an epoxy-based photoresist (SU8)/poly(methyl methacrylate) matrix at steps as small as 100 nm. We show for the first time that the distribution of axial strain (stress) along the flake deviates somewhat from the classical shear-lag prediction for a region of ∼ 2 μm from the edge. This behavior is mainly attributed to the presence of residual stresses, unintentional doping, and/or edge effects (deviation from the equilibrium values of bond lengths and angles, as well as different edge chiralities). By considering a simple balance of shear-to-normal stresses at the interface we are able to directly convert the strain (stress) gradient to values of interfacial shear stress for all the applied tensile levels without assuming classical shear-lag behavior. For large flakes a maximum value of interfacial shear stress of 0.4 MPa is obtained prior to flake slipping.

摘要

从聚合物基体到纳米夹杂物(如石墨烯薄片)的应力传递机制,对于制备有效的纳米复合材料极为重要。此前主要在微米尺度上开展的工作表明,应力传递的内在机制是界面处的剪切作用。然而,由于界面剪切在纳米夹杂物的边缘处达到最大值,因此评估边缘完整性对亚微米尺度轴向应力传递的影响极具意义。在此,我们在单层石墨烯薄片边缘附近进行了详细的拉曼线映射,该薄片简单支撑在环氧基光刻胶(SU8)/聚甲基丙烯酸甲酯基体上,步长小至100纳米。我们首次表明,沿薄片的轴向应变(应力)分布在距边缘约2微米的区域内,与经典的剪切滞后预测结果略有偏差。这种行为主要归因于残余应力、无意掺杂和/或边缘效应(键长和键角偏离平衡值,以及不同的边缘手性)。通过考虑界面处剪应力与正应力的简单平衡,我们能够在不假设经典剪切滞后行为的情况下,将所有施加拉伸水平下的应变(应力)梯度直接转换为界面剪应力值。对于大尺寸薄片,在薄片滑动之前,界面剪应力的最大值为0.4兆帕。

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