Department of Physics, Tampere University of Technology , P.O. Box 692, FI-33101 Tampere, Finland.
Nano Lett. 2015 Mar 11;15(3):1564-9. doi: 10.1021/nl503984b. Epub 2015 Feb 6.
We use second-harmonic generation (SHG) with focused vector beams to investigate individual vertically aligned GaAs nanowires. Our results provide direct evidence that SHG from oriented nanowires is mainly driven by the longitudinal field along the nanowire growth axis. Consequently, focused radial polarization provides a superior tool to characterize such nanowires compared to linear polarization, also allowing this possibility in the native growth environment. We model our experiments by describing the SHG process for zinc-blende structure and dipolar bulk nonlinearity.
我们使用聚焦矢量光束的二次谐波产生（SHG）来研究单个垂直排列的 GaAs 纳米线。我们的结果提供了直接的证据，表明沿纳米线生长轴的纵向场主要驱动了取向纳米线的 SHG。因此，与线性偏振相比，聚焦径向偏振为这种纳米线的特性提供了更好的工具，同时也允许在本征生长环境中实现这种可能性。我们通过描述闪锌矿结构和偶极体体非线性的 SHG 过程来对我们的实验进行建模。
