Tang Tao, Tang Nujiang, Zheng Yongping, Wan Xiangang, Liu Yuan, Liu Fuchi, Xu Qinghua, Du Youwei
1] Physics Department &Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, PR China [2] School of Science, Guilin University of Technology, Guilin 541004, PR China.
Physics Department &Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, PR China.
Sci Rep. 2015 Feb 13;5:8448. doi: 10.1038/srep08448.
Inducing robust magnetic moments on the basal plane of the graphene sheet is very difficult, and is one of the greatest challenges in the study of physical chemistry of graphene materials. Theoretical studies predicted that introduction of a kind of sp(3)-type defects formed by OH groups is an effective pathway to achieve this goal [Boukhvalov, D. W. &Katsnelson, M. I. ACS Nano 5, 2440-2446 (2011)]. Here we demonstrate that OH groups can efficiently induce robust magnetic moments on the basal plane of the graphene sheet. We show that the inducing efficiency can reach as high as 217 μB per 1000 OH groups. More interestingly, the magnetic moments are robust and can survive even at 900°C. Our findings highlight the importance of OH group as an effective sp(3)-type candidate for inducing robust magnetic moments on the basal plane of the graphene sheet.
在石墨烯片的基面上诱导出强大的磁矩非常困难，这是石墨烯材料物理化学研究中最大的挑战之一。理论研究预测，引入一种由羟基形成的sp(3)型缺陷是实现这一目标的有效途径[Boukhvalov, D. W. & Katsnelson, M. I. ACS Nano 5, 2440 - 2446 (2011)]。在此我们证明，羟基能够有效地在石墨烯片的基面上诱导出强大的磁矩。我们表明，诱导效率可高达每1000个羟基217 μB。更有趣的是，这些磁矩很稳定，甚至在900°C时仍能存在。我们的研究结果凸显了羟基作为在石墨烯片基面上诱导强大磁矩的有效sp(3)型候选者的重要性。
