Physics Department & Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
ACS Nano. 2013 Aug 27;7(8):6729-34. doi: 10.1021/nn4027905. Epub 2013 Jul 24.
Fluorination was confirmed to be the most effective route to introduce localized spins in graphene. However, adatoms clustering in perfect graphene lead to a low efficiency. In this study, we report experimental evidence of the generation of localized spin magnetic moments on defective graphene (reduced graphene oxide) through fluorination. More interstingly, the result shows that defects help increase the efficiency of the fluorination with regard to the density of magnetic moments created. Fluorinated reduced graphene oxide can have a high magnetic moment of 3.187 × 10(-3) μB per carbon atom and a high efficiency of 8.68 × 10(-3) μB per F atom. It may be attributed to the many vacancies, which hinder the clustering of F atoms, and introduce many magnetic edge adatoms.
氟化被证实是在石墨烯中引入局域自旋的最有效途径。然而，在完美的石墨烯中，吸附原子的团聚会导致效率低下。在这项研究中，我们通过氟化实验证实了在缺陷石墨烯（还原氧化石墨烯）中产生局域自旋磁矩的现象。更有趣的是，结果表明缺陷有助于提高氟化反应的效率，从而增加所产生的磁矩密度。氟化还原氧化石墨烯可以具有每个碳原子 3.187×10(-3)μB 的高磁矩和每个 F 原子 8.68×10(-3)μB 的高效率。这可能归因于许多空位，它们阻碍了 F 原子的团聚，并引入了许多磁性边缘吸附原子。
