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原子级薄的二硫化钼中波纹的形成及静电性质的局部应变工程

Formation of ripples in atomically thin MoS₂ and local strain engineering of electrostatic properties.

作者信息

Luo Siwei, Hao Guolin, Fan Yinping, Kou Liangzhi, He Chaoyu, Qi Xiang, Tang Chao, Li Jin, Huang Kai, Zhong Jianxin

机构信息

Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People's Republic of China. Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, People's Republic of China.

出版信息

Nanotechnology. 2015 Mar 13;26(10):105705. doi: 10.1088/0957-4484/26/10/105705. Epub 2015 Feb 17.

DOI:10.1088/0957-4484/26/10/105705
PMID:25686629
Abstract

Ripple is a common deformation in two-dimensional materials due to localized strain, which is expected to greatly influence the physical properties. The effects of the ripple deformation in the MoS2 layer on their physics, however, are rarely addressed experimentally. We here grow atomically thin MoS2 nanostructures by employing a vapor phase deposition method without any catalyst and observed the ripples in MoS2 nanostructures. The MoS2 ripples exhibit quasi-periodical ripple structures in the MoS2 surface. The heights of the ripples vary from several angstroms to tens of nanometers and the wavelength is in the range of several hundred nanometers. The growth mechanism of rippled MoS2 nanostructures is elucidated. We have also simultaneously investigated the electrostatic properties of MoS2 ripples by using Kelvin probe force microscopy, which shows inhomogeneous surface potential and charge distributions for MoS2 ripple nanostructures with different local strains.

摘要

波纹是二维材料中由于局部应变而产生的一种常见变形,预计会对物理性质产生重大影响。然而,二硫化钼(MoS2)层中波纹变形对其物理性质的影响很少有实验研究。我们在此采用无任何催化剂的气相沉积方法生长出原子级薄的MoS2纳米结构,并观察到了MoS2纳米结构中的波纹。MoS2波纹在MoS2表面呈现出准周期性的波纹结构。波纹的高度从几埃到几十纳米不等,波长在几百纳米范围内。阐明了波纹状MoS2纳米结构的生长机制。我们还通过开尔文探针力显微镜同时研究了MoS2波纹的静电性质,结果表明,具有不同局部应变的MoS2波纹纳米结构具有不均匀的表面电势和电荷分布。

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