通过在铅气氛中快速退火在6H-SiC(0001)上制备的高质量单层外延石墨烯及其机理。
High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism.
作者信息
Hu T W, Liu X T, Ma F, Ma D Y, Xu K W, Chu P K
机构信息
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China.
出版信息
Nanotechnology. 2015 Mar 13;26(10):105708. doi: 10.1088/0957-4484/26/10/105708. Epub 2015 Feb 20.
High-quality epitaxial graphene is produced on silicon carbide by flash annealing of 6H-SiC in a lead (Pb) atmosphere at ∼1400 °C for 30 s. Nearly three top bilayers of SiC are decomposed due to fast heating and cooling, and sublimation of Si atoms from SiC is retarded by the Pb atmosphere. The synergetic effects promote the growth of continuous single-layered graphene sheets on the SiC terraces, and a model is established to elucidate the effects and growth mechanism.
通过在铅（Pb）气氛中于约1400°C对6H-SiC进行30秒的快速退火，在碳化硅上制备出高质量的外延石墨烯。由于快速加热和冷却，近三层顶层的SiC被分解，并且Pb气氛抑制了SiC中Si原子的升华。这些协同效应促进了SiC台阶上连续单层石墨烯片的生长，并建立了一个模型来阐明这些效应和生长机制。
Zotero 插件