Kwolek Przemysław, Pilarczyk Kacper, Tokarski Tomasz, Mech Justyna, Irzmański Jakub, Szaciłowski Konrad
Department of Materials Science, Rzeszow University of Technology, ul. W. Pola 2, 35-959 Rzeszów, Poland. AGH University of Science and Technology, Faculty of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Kraków, Poland.
Nanotechnology. 2015 Mar 13;26(10):105710. doi: 10.1088/0957-4484/26/10/105710. Epub 2015 Feb 20.
In the presented work the photoelectrochemical properties of SbSI along with the electronic structure (i.e. conduction and valence band edge potentials as well as conductivity type) of sonochemically obtained nanowires are discussed for the first time. The spectroscopic investigations indicate interesting optical properties, including surface isotope effect and excitonic emission. The photoelectrochemical investigation of SbSI revealed the occurrence of the photoelectrochemical photocurrent switching effect. It may be defined as a change in photocurrent direction (generated at the illuminated semiconducting electrode immersed in electrolyte) due to an appropriate polarization of the electrode versus the reference electrode. It is often observed for semiconductors as a result of the reduction of molecular oxygen dissolved in the electrolyte. However, in the case of SbSI, the photocurrent switching was recorded regardless of the presence of molecular oxygen in the electrolyte, probably due to the reduction of triiodide species formed at anodic polarization of the SbSI electrode, in an iodide-containing electrolyte. The switching potential (i.e. the potential where anodic-to-cathodic photocurrent transition occurs) equals to ca. 0.4 V versus standard hydrogen electrode, which is close to the formal potential of the I(-)/I3(-) redox couple. Therefore, this semiconducting material is of potential interest for the construction of new photovoltaic systems, novel optoelectronic switches and logic devices.
在本研究工作中,首次讨论了SbSI的光电化学性质以及通过声化学方法制备的纳米线的电子结构(即导带和价带边缘电位以及导电类型)。光谱研究表明了其有趣的光学性质,包括表面同位素效应和激子发射。对SbSI的光电化学研究揭示了光电化学光电流切换效应的存在。它可以定义为由于电极相对于参比电极的适当极化,浸入电解质中的光照半导体电极产生的光电流方向的变化。由于溶解在电解质中的分子氧的还原,这种现象在半导体中经常被观察到。然而,在SbSI的情况下,无论电解质中是否存在分子氧,都记录到了光电流切换,这可能是由于在含碘电解质中SbSI电极阳极极化时形成的三碘化物物种的还原。切换电位(即发生阳极到阴极光电流转变的电位)相对于标准氢电极约为0.4 V,这接近I(-)/I3(-)氧化还原对的形式电位。因此,这种半导体材料对于构建新型光伏系统、新型光电子开关和逻辑器件具有潜在的研究价值。