Department of Electrical and Computer Engineering and Materials Science and Engineering Program and ‡Department of Physics, University of Houston , Houston, Texas 77204, United States.
Nano Lett. 2015 Mar 11;15(3):2194-202. doi: 10.1021/acs.nanolett.5b00388. Epub 2015 Mar 2.
Mg rechargeable batteries (MgRBs) represent a safe and high-energy battery technology but suffer from the lack of suitable cathode materials due to the slow solid-state diffusion of the highly polarizing divalent Mg ion. Previous methods improve performance at the cost of incompatibility with anode/electrolyte and drastic decrease in volumetric energy density. Herein we report interlayer expansion as a general and effective atomic-level lattice engineering approach to transform inactive intercalation hosts into efficient Mg storage materials without introducing adverse side effects. As a proof-of-concept we have combined theory, synthesis, electrochemical measurement, and kinetic analysis to improve Mg diffusion behavior in MoS2, which is a poor Mg transporting material in its pristine form. First-principles simulations suggest that expanded interlayer spacing allows for fast Mg diffusion because of weakened Mg-host interactions. Experimentally, the expansion was realized by inserting a controlled amount of poly(ethylene oxide) into the lattice of MoS2 to increase the interlayer distance from 0.62 nm to up to 1.45 nm. The expansion boosts Mg diffusivity by 2 orders of magnitude, effectively enabling the otherwise barely active MoS2 to approach its theoretical storage capacity as well as to achieve one of the highest rate capabilities among Mg-intercalation materials. The interlayer expansion approach can be leveraged to a wide range of host materials for the storage of various ions, leading to novel intercalation chemistry and opening up new opportunities for the development of advanced materials for next-generation energy storage.
镁可充电电池(MgRBs)代表了一种安全且高能量的电池技术,但由于二价镁离子的高极化性,其固态扩散缓慢,因此缺乏合适的阴极材料。以前的方法在提高性能的同时,牺牲了与阳极/电解质的兼容性,并大幅降低了体积能量密度。在此,我们报告了层间膨胀作为一种通用且有效的原子级晶格工程方法,可将非活性插层主体转化为高效的 Mg 存储材料,而不会引入不利的副作用。作为概念验证,我们结合了理论、合成、电化学测量和动力学分析,以改善 MoS2 中的 Mg 扩散行为,因为 MoS2 在原始形式下是一种较差的 Mg 传输材料。第一性原理模拟表明,由于 Mg-主体相互作用减弱,层间间距的扩大允许快速的 Mg 扩散。实验上,通过将一定量的聚(氧化乙烯)插入 MoS2 的晶格中,将层间距离从 0.62nm 扩大到 1.45nm,从而实现了膨胀。这种膨胀使 Mg 扩散系数提高了 2 个数量级,有效地使原本几乎不活跃的 MoS2 能够接近其理论存储容量,并实现了 Mg 插层材料中最高的倍率性能之一。层间膨胀方法可以应用于广泛的主体材料,用于存储各种离子,从而产生新的插层化学,并为下一代储能先进材料的开发开辟新的机会。