Yan Long, Zhang Yu, Zhang Xiaoyu, Zhao Jia, Wang Yu, Zhang Tieqiang, Jiang Yongheng, Gao Wenzhu, Yin Jingzhi, Zhao Jun, Yu William W
State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China. College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, People's Republic of China.
Nanotechnology. 2015 Mar 27;26(13):135201. doi: 10.1088/0957-4484/26/13/135201. Epub 2015 Mar 9.
Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.
单层石墨烯被用作量子点发光二极管（QD-LED）中的电极，以替代氧化铟锡（ITO）。石墨烯层表现出低表面粗糙度、良好的空穴注入能力以及与聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）层相匹配的合适功函数。与空穴传输层和电子传输层一起，制备的QD-LED显示出良好的电流效率和功率效率，在低电流密度下甚至高于基于ITO的类似器件。结果表明，石墨烯可作为阳极替代QD-LED中的ITO。
