Chen Jing, Huang Qianqian, Lei Wei
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Materials (Basel). 2022 Jan 19;15(3):740. doi: 10.3390/ma15030740.
We report on a green, dual emissive quantum-dot light-emitting diode (QLED) using alumina (Al)-doped ZnO (AZO) to adjust the band offset between the cathode and QD-emitting layers. The dual emissive QLED structure was designed by enhancing the efficient hole injection/transfer and slowing down the electron injection/transfer from AZO to the QD. The QLEDs presented a maximum luminance of 9450 cd/m, corresponding to a power efficiency of 15.7 lm/W, a current efficiency of 25.5 cd/A, as well as a turn-on voltage of 2.3 V. It is worth noting that the performance of the dual emissive QLED is comparable to that of a single emissive QLED. Therefore, there is a 1.3-fold enhancement in the performance of the QLED based on the AZO cathode due to the balanced charge injection/transfer.
我们报道了一种绿色双发射量子点发光二极管（QLED），它使用氧化铝（Al）掺杂的氧化锌（AZO）来调节阴极与量子点发光层之间的能带偏移。通过增强空穴的有效注入/传输以及减缓从AZO到量子点的电子注入/传输，设计了这种双发射QLED结构。这些QLED的最大亮度为9450 cd/m²，对应的功率效率为15.7 lm/W，电流效率为25.5 cd/A，开启电压为2.3 V。值得注意的是，双发射QLED的性能与单发射QLED相当。因此，由于电荷注入/传输的平衡，基于AZO阴极的QLED性能提高了1.3倍。
