硅衬底上的高速 GaN/GaInN 纳米线阵列发光二极管。

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

机构信息

†Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.

出版信息

Nano Lett. 2015 Apr 8;15(4):2318-23. doi: 10.1021/nl504447j. Epub 2015 Mar 20.

DOI:10.1021/nl504447j

PMID:25758029

Abstract

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.

摘要

在 c 面生长的 GaN 基发光二极管（LED）的高速开关性能受到自发极化和压电极化引起的长载流子寿命的限制。本工作证明，通过在 Si(111)上生长 m 面核壳结构 InGaN/GaN 纳米线 LED 可以克服这一限制。在 GHz 电激发下，时间分辨电致发光研究显示出约 220 ps 的 90-10%上升和下降时间。这些数据强调了这些器件在聚合物光纤和自由空间中进行光数据通信的潜力。