Li Qiming, Westlake Karl R, Crawford Mary H, Lee Stephen R, Koleske Daniel D, Figiel Jeffery J, Cross Karen C, Fathololoumi Saeed, Mi Zetian, Wang George T
Sandia National Laboratories, Albuquerque, NM87185, USA.
Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.
Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.
垂直排列的氮化铟镓/氮化镓纳米棒发光二极管（LED）阵列是通过一种新的自上而下制造技术从平面LED结构制备而成的，该技术包括等离子体蚀刻，随后进行各向异性湿法蚀刻。湿法蚀刻产生了直径可控、笔直、光滑且具有良好刻面的纳米棒，并消除了等离子体蚀刻损伤。94%的纳米棒LED无位错，并且由于压电场降低，观察到量子限制斯塔克效应减小。尽管有这些优点，但通过光致发光测量的纳米棒LED的内部量子效率与平面LED相当，这可能是由于热传输效率低下和非辐射表面复合增强所致。
