基于氮化镓纳米线的纳米发电机和发光二极管。

Gallium nitride nanowire based nanogenerators and light-emitting diodes.

机构信息

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA.

出版信息

ACS Nano. 2012 Jun 26;6(6):5687-92. doi: 10.1021/nn301814w. Epub 2012 May 23.

Abstract

Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.

摘要

单晶 n 型 GaN 纳米线已经在 Mg 掺杂的 p 型 GaN 衬底上外延生长。通过导电原子力显微镜研究了基于 GaN 纳米线的压电纳米发电机，结果表明输出功率密度接近 12.5 mW/m2。基于 n-GaN 纳米线/p-GaN 衬底的发光 LED 模块已经被制造出来。在正向偏压下，记录了点亮的 LED 的 CCD 图像和相应的电致发光光谱。此外，GaN 纳米线 LED 可以被基于 ZnO 纳米线的纳米发电机提供的电力点亮，展示了一种使用纤锌矿结构纳米材料的自供电 LED。