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使用纳米结构钽吸气模板对磁性薄膜和多层膜进行图案化处理。

Patterning of magnetic thin films and multilayers using nanostructured tantalum gettering templates.

作者信息

Qiu Wenlan, Chang Long, Lee Dahye, Dannangoda Chamath, Martirosyan Karen, Litvinov Dmitri

出版信息

ACS Appl Mater Interfaces. 2015 Mar 25;7(11):6014-8. doi: 10.1021/am5090463. Epub 2015 Mar 12.

Abstract

This work demonstrates that a nonmagnetic thin film of cobalt oxide (CoO) sandwiched between Ta seed and capping layers can be effectively reduced to a magnetic cobalt thin film by annealing at 200 °C, whereas CoO does not exhibit ferromagnetic properties at room temperature and is stable at up to ∼400 °C. The CoO reduction is attributed to the thermodynamically driven gettering of oxygen by tantalum, similar to the exothermic reduction-oxidation reaction observed in thermite systems. Similarly, annealing at 200 °C of a nonmagnetic [CoO/Pd]N multilayer thin film sandwiched between Ta seed and Ta capping layers results in the conversion into a magnetic [Co/Pd]N multilayer, a material with perpendicular magnetic anisotropy that is of interest for magnetic data storage applications. A nanopatterning approach is introduced where [CoO/Pd]N multilayers is locally reduced into [Co/Pd]N multilayers to achieve perpendicular magnetic anisotropy nanostructured array. This technique can potentially be adapted to nanoscale patterning of other systems for which thermodynamically favorable combination of oxide and gettering layers can be identified.

摘要

这项工作表明,夹在钽籽层和覆盖层之间的氧化钴(CoO)非磁性薄膜在200°C退火时可有效还原为磁性钴薄膜,而CoO在室温下不表现出铁磁特性,且在高达约400°C时稳定。CoO的还原归因于钽对氧的热力学驱动吸除,类似于在铝热剂系统中观察到的放热还原-氧化反应。同样,夹在钽籽层和钽覆盖层之间的非磁性[CoO/Pd]N多层薄膜在200°C退火会导致转变为磁性[Co/Pd]N多层膜,这是一种具有垂直磁各向异性的材料,在磁数据存储应用中备受关注。引入了一种纳米图案化方法,其中[CoO/Pd]N多层膜被局部还原为[Co/Pd]N多层膜,以实现垂直磁各向异性纳米结构阵列。该技术有可能适用于其他系统的纳米级图案化,对于这些系统,可以确定氧化物层和吸除层在热力学上有利的组合。

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