Salaheldeen Mohamed, Nafady Ayman, Abu-Dief Ahmed M, Díaz Crespo Rosario, Fernández-García María Paz, Andrés Juan Pedro, López Antón Ricardo, Blanco Jesús A, Álvarez-Alonso Pablo
Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt.
Departamento de Física, Universidad de Oviedo, C/Federico García Lorca 18, 33007 Oviedo, Spain.
Nanomaterials (Basel). 2022 Jul 24;12(15):2544. doi: 10.3390/nano12152544.
The interest in magnetic nanostructures exhibiting perpendicular magnetic anisotropy and exchange bias (EB) effect has increased in recent years owing to their applications in a new generation of spintronic devices that combine several functionalities. We present a nanofabrication process used to induce a significant out-of-plane component of the magnetic easy axis and EB. In this study, 30 nm thick CoO/Co multilayers were deposited on nanostructured alumina templates with a broad range of pore diameters, 34 nm ≤ Dp ≤ 96 nm, maintaining the hexagonal lattice parameter at 107 nm. Increase of the exchange bias field (HEB) and the coercivity (HC) (12 times and 27 times, respectively) was observed in the nanostructured films compared to the non-patterned film. The marked dependence of HEB and HC with antidot hole diameters pinpoints an in-plane to out-of-plane changeover of the magnetic anisotropy at a nanohole diameter of ∼75 nm. Micromagnetic simulation shows the existence of antiferromagnetic layers that generate an exceptional magnetic configuration around the holes, named as antivortex-state. This configuration induces extra high-energy superdomain walls for edge-to-edge distance >27 nm and high-energy stripe magnetic domains below 27 nm, which could play an important role in the change of the magnetic easy axis towards the perpendicular direction.
近年来,由于具有垂直磁各向异性和交换偏置(EB)效应的磁性纳米结构在结合多种功能的新一代自旋电子器件中的应用,人们对其兴趣日益增加。我们展示了一种用于诱导磁易轴和面外分量以及EB的纳米制造工艺。在本研究中,30 nm厚的CoO/Co多层膜沉积在孔径范围为34 nm ≤ Dp ≤ 96 nm的纳米结构氧化铝模板上,同时将六方晶格参数保持在107 nm。与未图案化的薄膜相比,在纳米结构薄膜中观察到交换偏置场(HEB)和矫顽力(HC)分别增加了12倍和27倍。HEB和HC对反点孔直径的显著依赖性表明,在纳米孔直径约为75 nm时,磁各向异性从面内转变为面外。微磁模拟表明存在反铁磁层,这些反铁磁层在孔周围产生一种特殊的磁构型,称为反涡旋态。这种构型在边缘到边缘距离>27 nm时诱导出额外的高能超畴壁,在低于27 nm时诱导出高能条纹磁畴,这可能在磁易轴向垂直方向的转变中起重要作用。