Department of Physics, Annamalai University, Annamalai Nagar 608 002, India.
Spectrochim Acta A Mol Biomol Spectrosc. 2013 Nov;115:840-4. doi: 10.1016/j.saa.2013.06.112. Epub 2013 Jul 6.
Thin films of antimony doped tin sulphide (SnS:Sb) with different antimony concentrations have been prepared by the spray pyrolysis technique at the substrate temperature of 350°C. The physical properties of the films were studied as a function of increase in antimony dopant concentration (up to 10at.%). The films were characterized by different techniques to study their structural, optical and electrical properties. The X-ray diffraction analysis revealed that the films were polycrystalline in nature and having orthorhombic crystal structure with a preferred orientation in (111) direction. Due to Sb doping, the crystalline quality and the preferential orientation of SnS films were improved up to 6at.% of doping concentration. However, when doping concentration was increased above 6at.%, the crystalline quality and the preferential orientation of SnS films was deteriorated. Atomic force microscopy images revealed that the surface roughness of the films increased due to Sb doping. Optical measurements showed that the band gap values decreased from 1.60eV to 1.15eV with increase in Sb concentration. The photoluminescence spectra displayed that all the samples have an emission peak centered at 760nm. At 6at.% of Sb doping, the film has the lowest resistivity of 2.598×10(-2)Ωcm while the carrier concentration was high.
已经通过喷雾热解技术在 350°C 的衬底温度下制备了具有不同锑浓度的掺锑硫化锡（SnS:Sb）薄膜。研究了薄膜的物理性质随锑掺杂浓度（高达 10at.%）的增加而变化。通过不同的技术对薄膜进行了表征，以研究其结构、光学和电学性质。X 射线衍射分析表明，薄膜为多晶态，具有正交晶系结构，择优取向为（111）方向。由于 Sb 掺杂，SnS 薄膜的晶体质量和择优取向在掺杂浓度达到 6at.%时得到了提高。然而，当掺杂浓度超过 6at.%时，SnS 薄膜的晶体质量和择优取向恶化。原子力显微镜图像表明，由于 Sb 掺杂，薄膜的表面粗糙度增加。光学测量表明，带隙值从 1.60eV 降低到 1.15eV，随着 Sb 浓度的增加。光致发光谱显示所有样品在 760nm 处有一个发射峰。在 6at.%的 Sb 掺杂下，薄膜的电阻率最低为 2.598×10(-2)Ωcm，而载流子浓度较高。
