Lee Youngbin, Hwang Yubin, Chung Yong-Chae
Department of Materials Science and Engineering, Hanyang University Seoul, Seoul 133-791, Republic of Korea.
ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7163-9. doi: 10.1021/acsami.5b00063. Epub 2015 Mar 26.
In the present work, type I, II, and III heterostructures are constructed with the same base material using three representative functionalized monolayer scandium carbides (Sc2CF2, Sc2C(OH)2, and Sc2CO2) by first-principles calculations based on density functional theory. In contrast to general bilayer heterosystems composed of two-dimensional semiconductors, type I and III heterojunctions are obtained in one Sc2CF2/Sc2CO2 system and the remains of the functionalized Sc2C heterostructures, respectively. It is noteworthy that the same monolayer Sc2CF2 and Sc2CO2 constituents lead to dissimilar heterostructure types in the two Sc2CF2/Sc2CO2 systems by modifying the stacking interface. In addition, in the two Sc2CF2/Sc2CO2 systems, remarkable changes in the heterojunction type are induced by a strain, and two distinct type-II heterostructures are generated where one layer with the conduction band minimum state and the other layer including the valence band maximum level are different. The present work suggests an attractive direction to obtain all heterostructure types with the same base material for novel nanodevices in various fields such as photonics, electronics, and optoelectronics using only the two monolayer components Sc2CF2 and Sc2CO2.
在本工作中,基于密度泛函理论的第一性原理计算,使用三种具有代表性的功能化单层碳化钪(Sc2CF2、Sc2C(OH)2和Sc2CO2),以相同的基础材料构建了I型、II型和III型异质结构。与由二维半导体组成的一般双层异质系统不同,在一个Sc2CF2/Sc2CO2系统以及功能化Sc2C异质结构的其余部分中分别获得了I型和III型异质结。值得注意的是,相同的单层Sc2CF2和Sc2CO2成分通过改变堆叠界面,在两个Sc2CF2/Sc2CO2系统中导致了不同类型的异质结构。此外,在两个Sc2CF2/Sc2CO2系统中,应变会引起异质结类型的显著变化,并产生两种不同的II型异质结构,其中一层具有导带最小状态,另一层包含价带最大能级。本工作为在光子学、电子学和光电子学等各个领域中,仅使用Sc2CF2和Sc2CO2这两种单层组件,以相同的基础材料获得用于新型纳米器件的所有异质结构类型提供了一个有吸引力的方向。