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GaP 拉曼太赫兹高准确度光谱仪及其在有机和无机晶体缺陷检测中的应用。

GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects.

机构信息

Semiconductor Research Institute, Sendai, Japan .

Department of Material Science, Tohoku University, Sendai, Japan .

出版信息

Proc Jpn Acad Ser B Phys Biol Sci. 2006 Dec;82(9):353-8. doi: 10.2183/pjab.82.353. Epub 2006 Feb 12.

Abstract

One of the most important uses of THz spectrometry is to detect defects in molecular structure or in crystals efficiently. We applied GaP Raman THz (GRT) spectrometer to detect and evaluate defects in inorganic and organic materials. High THz-wave absorption due to high defect density of GaSe crystal lowered the efficiency of THz wave generation, when the crystal is used as nonlinear material for DFG (Difference Frequency Generation). Defects in organic molecules could be observed as changes in frequency, intensities of the absorption, and broadenings of the spectra.

摘要

太赫兹光谱学的一个重要用途是高效检测分子结构或晶体中的缺陷。我们应用 GaP 拉曼太赫兹(GRT)光谱仪来检测和评估无机和有机材料中的缺陷。由于 GaSe 晶体的高缺陷密度导致太赫兹波吸收高,从而降低了作为 DFG(差频产生)非线性材料的太赫兹波产生效率。有机分子中的缺陷可以通过频率变化、吸收强度和光谱展宽来观察到。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9771/4338840/24210c75b982/82_353f1.jpg

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