Li Hua-Min, Lee Daeyeong, Qu Deshun, Liu Xiaochi, Ryu Jungjin, Seabaugh Alan, Yoo Won Jong
1] Department of Nano Science and Technology, Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea [2] Department of Electrical Engineering, Center for Low Energy Systems Technology (LEAST), University of Notre Dame, Notre Dame, Indiana 46556, USA.
Department of Nano Science and Technology, Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Nat Commun. 2015 Mar 24;6:6564. doi: 10.1038/ncomms7564.
Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS₂ by introducing AuCl₃ and benzyl viologen dopants. Unlike usual unipolar MoS₂, the MoS₂ p-n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p-n homogeneous junctions in MoS₂ is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS₂ p-n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.
半导体二维晶体因其作为高效静电调制超薄体的巨大潜力而受到广泛关注，这使其能够克服硅技术的局限性。在此我们报告，作为二维半导体器件的关键组成部分，通过引入AuCl₃和苄基紫精掺杂剂，在超薄MoS₂中制备了垂直p-n结。与通常的单极MoS₂不同，MoS₂ p-n结表现出双极性载流子传输，在厚度大于8nm的薄膜中通过势垒调制实现电流整流，在厚度小于8nm的薄膜中通过隧穿实现反向电流整流。实验发现MoS₂中垂直p-n同质结的极限厚度为3nm，化学掺杂深度为1.5nm。超薄MoS₂ p-n结展现出二维晶体在柔性、透明、高效电子和光电子应用方面的巨大潜力。
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