• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

氮原子掺杂的石墨烯纳米带的电子结构:理论洞察

Electronic structure of graphene nanoribbons doped with nitrogen atoms: a theoretical insight.

作者信息

Torres A E, Fomine S

机构信息

Universidad Nacional Autónoma de Mexico, Instituto de Investigaciones en Materiales, Mexico, Mexico.

出版信息

Phys Chem Chem Phys. 2015 Apr 28;17(16):10608-14. doi: 10.1039/c5cp00227c.

DOI:10.1039/c5cp00227c
PMID:25804382
Abstract

The electronic structure of graphene nanoribbons doped with a graphitic type of nitrogen atoms has been studied using B3LYP, B2PLYP and CAS methods. In all but one case the restricted B3LYP solutions were unstable and the CAS calculations provided evidence for the multiconfigurational nature of the ground state with contributions from two dominant configurations. The relative stability of the doped nanoribbons depends mostly on the mutual position of the dopant atoms and notably less on the position of nitrogen atoms within the nanoribbon. N-graphitic doping affects cationic states much more than anionic ones due the participation of the nitrogen atoms in the stabilization of the positive charge, resulting in a drop in ionization energies (IPs) for N-graphitic doped systems. Nitrogen atoms do not participate in the negative charge stabilization of anionic species and, therefore, the doping does not affect the electron affinities (EAs). The unrestricted B3LYP method is the method of choice for the calculation of IPs and EAs. Restricted B3LYP and B2PLYP produces unreliable results for both IPs and EAs while CAS strongly underestimates the electron affinities. This is also true for the reorganization energies where restricted B3LYP produces qualitatively incorrect results. Doping changes the reorganization energy of the nanoribbons; the hole reorganization energy is generally higher than the corresponding electron reorganization energy due to the participation of nitrogen atoms in the stabilization of the positive charge.

摘要

利用B3LYP、B2PLYP和CAS方法研究了掺杂石墨型氮原子的石墨烯纳米带的电子结构。除一种情况外,所有受限B3LYP解均不稳定,而CAS计算为基态的多组态性质提供了证据,其来自两种主要组态的贡献。掺杂纳米带的相对稳定性主要取决于掺杂原子的相互位置,而在纳米带内氮原子的位置对其影响明显较小。由于氮原子参与正电荷的稳定,石墨型氮掺杂对阳离子态的影响远大于对阴离子态的影响,导致石墨型氮掺杂体系的电离能(IPs)下降。氮原子不参与阴离子物种的负电荷稳定,因此,掺杂不影响电子亲和能(EAs)。非受限B3LYP方法是计算IPs和EAs的首选方法。受限B3LYP和B2PLYP对IPs和EAs都产生不可靠的结果,而CAS则严重低估了电子亲和能。对于重组能也是如此,受限B3LYP产生定性错误的结果。掺杂改变了纳米带的重组能;由于氮原子参与正电荷的稳定,空穴重组能通常高于相应的电子重组能。

相似文献

1
Electronic structure of graphene nanoribbons doped with nitrogen atoms: a theoretical insight.氮原子掺杂的石墨烯纳米带的电子结构:理论洞察
Phys Chem Chem Phys. 2015 Apr 28;17(16):10608-14. doi: 10.1039/c5cp00227c.
2
Electronic structure of hybrid pentaheptite carbon nanoflakes containing boron-nitrogen motifs.含有硼氮结构单元的混合五庚石碳纳米片的电子结构
J Mol Model. 2020 Mar 7;26(4):72. doi: 10.1007/s00894-020-4324-9.
3
Electronic interaction between nitrogen atoms in doped graphene.掺杂石墨烯中氮原子的电子相互作用。
ACS Nano. 2015 Jan 27;9(1):670-8. doi: 10.1021/nn506074u. Epub 2015 Jan 9.
4
Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene.氮掺杂石墨烯中电荷输运的电子空穴对称破缺。
ACS Nano. 2017 May 23;11(5):4641-4650. doi: 10.1021/acsnano.7b00313. Epub 2017 May 4.
5
Chemical nature of boron and nitrogen dopant atoms in graphene strongly influences its electronic properties.石墨烯中硼和氮掺杂原子的化学性质强烈影响其电子性质。
Phys Chem Chem Phys. 2014 Jul 21;16(27):14231-5. doi: 10.1039/c4cp01638f. Epub 2014 Jun 10.
6
Formation of nitrogen-doped graphene nanoribbons via chemical unzipping.通过化学解拉链法制备掺氮石墨烯纳米带。
ACS Nano. 2013 Mar 26;7(3):2192-204. doi: 10.1021/nn305179b. Epub 2013 Mar 4.
7
Selective in-plane nitrogen doping of graphene by an energy-controlled neutral beam.通过能量控制中性束对石墨烯进行选择性面内氮掺杂。
Nanotechnology. 2015 Dec 4;26(48):485602. doi: 10.1088/0957-4484/26/48/485602. Epub 2015 Nov 12.
8
Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.氮气流下生长在 4H-SiC(0001) 上的外延石墨烯:低氮掺杂和高电荷转移的证据。
ACS Nano. 2012 Dec 21;6(12):10893-900. doi: 10.1021/nn304315z. Epub 2012 Nov 20.
9
Theory of nitrogen doping of carbon nanoribbons: edge effects.碳纳米带氮掺杂理论:边缘效应。
J Chem Phys. 2012 Jan 7;136(1):014702. doi: 10.1063/1.3673441.
10
Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons.N/B 掺杂对碳纳米管、碳纳米角和石墨烯纳米带的电子和场发射性能的影响。
Nanoscale. 2010 Jul;2(7):1069-82. doi: 10.1039/c0nr00002g. Epub 2010 May 11.

引用本文的文献

1
Electronic structure of hybrid pentaheptite carbon nanoflakes containing boron-nitrogen motifs.含有硼氮结构单元的混合五庚石碳纳米片的电子结构
J Mol Model. 2020 Mar 7;26(4):72. doi: 10.1007/s00894-020-4324-9.
2
Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors.调控全二维石墨烯-纳米片异质结构光电探测器中的电荷转移
Sci Rep. 2016 May 4;6:24909. doi: 10.1038/srep24909.