Merdassi Adel, Yang Peng, Chodavarapu Vamsy P
Department of Electrical and Computer Engineering, McGill University, McConnell Engineering Building, 3480 University Street, Montreal, QC H3A 0E9, Canada.
CMC Microsystems, 945 Princess Street, Building 50, Innovation Park at Queen's University, Kingston, ON K7L 3N6, Canada.
Sensors (Basel). 2015 Mar 25;15(4):7349-59. doi: 10.3390/s150407349.
We present the design and fabrication of a single axis low noise accelerometer in an unmodified commercial MicroElectroMechanical Systems (MEMS) process. The new microfabrication process, MEMS Integrated Design for Inertial Sensors (MIDIS), introduced by Teledyne DALSA Inc. allows wafer level vacuum encapsulation at 10 milliTorr which provides a high Quality factor and reduces noise interference on the MEMS sensor devices. The MIDIS process is based on high aspect ratio bulk micromachining of single-crystal silicon layer that is vacuum encapsulated between two other silicon handle wafers. The process includes sealed Through Silicon Vias (TSVs) for compact design and flip-chip integration with signal processing circuits. The proposed accelerometer design is sensitive to single-axis in-plane acceleration and uses a differential capacitance measurement. Over ±1 g measurement range, the measured sensitivity was 1 fF/g. The accelerometer system was designed to provide a detection resolution of 33 milli-g over the operational range of ±100 g.
我们展示了一种采用未经修改的商用微机电系统（MEMS）工艺设计和制造的单轴低噪声加速度计。Teledyne DALSA公司推出的新型微制造工艺——惯性传感器的MEMS集成设计（MIDIS），允许在10毫托的压力下进行晶圆级真空封装，这提供了高品质因数并减少了对MEMS传感器设备的噪声干扰。MIDIS工艺基于对单晶硅层进行高深宽比体微加工，该单晶硅层被真空封装在另外两个硅处理晶圆之间。该工艺包括用于紧凑设计的密封硅通孔（TSV）以及与信号处理电路的倒装芯片集成。所提出的加速度计设计对单轴平面内加速度敏感，并采用差分电容测量。在±1 g的测量范围内，测得的灵敏度为1 fF/g。加速度计系统设计为在±100 g的工作范围内提供33毫伽的检测分辨率。
