键合在硅衬底上的对接内置薄膜分布反馈激光器的亚毫安阈值操作。

Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate.

作者信息

Inoue Daisuke, Lee Jieun, Hiratani Takuo, Atsuji Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa

出版信息

Opt Express. 2015 Mar 23;23(6):7771-8. doi: 10.1364/OE.23.007771.

DOI:10.1364/OE.23.007771

Abstract

We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.

摘要

我们通过使用苯并环丁烯（BCB）粘合剂键合在硅衬底上制造了用于片上光互连的GaInAsP/InP波导集成横向电流注入（LCI）薄膜分布反馈（DFB）激光器。通过有机金属气相外延（OMVPE）实现了对接内置（BJB）GaInAsP无源波导的集成。通过引入具有50μm长腔的强折射率耦合DFB结构，在室温连续波（RT-CW）条件下，对于0.8μm的条宽，阈值电流达到230μA。获得了32μW的最大输出功率。在1.2mA的偏置电流下，激射波长和子模抑制比（SMSR）分别为1534nm和28dB。