Shi Suixing, Zhang Zhi, Lu Zhenyu, Shu Haibo, Chen Pingping, Li Ning, Zou Jin, Lu Wei
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China.
Materials Engineering, The University of Queensland, St. Lucia, Brisbane, QLD 4072 Australia.
Nanoscale Res Lett. 2015 Mar 1;10:108. doi: 10.1186/s11671-015-0812-8. eCollection 2015.
In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.
在本文中，我们通过分子束外延（MBE）成功生长了GaAs/GaSb核壳异质结构纳米线（NWs）。生长出的GaSb壳层形成的是纤锌矿结构，而非通常报道的闪锌矿结构。同时，在GaAs/GaSb核壳纳米线顶部还出现了一个凸起的GaSb纳米板，且具有纯闪锌矿相。我们详细讨论了GaAs/GaSb纳米线异质结构的核壳形态生长模式以及晶相选择的潜在机制。
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