Department of Materials Science & Engineering, National Tsing Hua University, No, 101, Sec, 2, Kuang-Fu Rd, Hsinchu 30013, Taiwan.
Nanoscale Res Lett. 2013 Jul 18;8(1):327. doi: 10.1186/1556-276X-8-327.
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal-semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm-3 and an electron mobility of 215.25 cm2 V-1 s-1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W-1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.
基于金属-半导体-金属（M-S-M）结构，我们成功制备出了单晶铟锑（InSb）纳米线中红外光电探测器。室温下，我们通过电化学方法合成了 InSb 纳米线。FET 的特性表明，电子浓度为 3.6×1017 cm-3，电子迁移率为 215.25 cm2 V-1 s-1。光电探测器表现出良好的光电导性能、优异的稳定性、重现性、超高的响应率（8.4×104 A W-1）和量子效率（1.96×106%）。这些优异的性能归因于光电探测器具有高的比表面积和单晶 1D 纳米结构，这显著减少了在输运过程中的散射、俘获和电极间的渡越时间。此外，M-S-M 结构通过形成肖特基接触可以有效地增强空间电荷效应，这显著有助于电子注入和光电流增益。
