Rakhlin M V, Belyaev K G, Klimko G V, Mukhin I S, Kirilenko D A, Shubina T V, Ivanov S V, Toropov A A
Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia.
St. Petersburg Academic University RAS, 8/3 Khlopina str., St. Petersburg, 194021, Russia.
Sci Rep. 2018 Mar 28;8(1):5299. doi: 10.1038/s41598-018-23687-7.
We report on comparative optical studies of InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spectroscopy using 500-nm-size etched cylindric mesa structures. The single-photon statistics of the QDs of both types, emitting in the red spectral range between 636 and 750 nm, is confirmed by the measurements of the second-order correlation function. A negligibly small exciton fine structure splitting is detected in the majority of the QDs grown with the GaAs interlayer that implies the possibility of generating pairs of entangled photons with high entanglement fidelity.
我们报告了通过分子束外延生长的InAs/AlGaAs量子点（QD）的比较光学研究，其中在AlGaAs势垒和InAs量子点之间插入或未插入薄GaAs中间层。使用500纳米尺寸的蚀刻圆柱形台面结构，通过微光致发光光谱研究单个量子点的发射特性。通过二阶相关函数的测量，证实了两种类型的量子点在636至750纳米的红色光谱范围内发射的单光子统计特性。在大多数生长有GaAs中间层的量子点中检测到可忽略不计的小激子精细结构分裂，这意味着有可能产生具有高纠缠保真度的纠缠光子对。
