面心立方织构的Co2Fe6B2钉扎层对与[Co/Pd](n)-SyAF层堆叠的Co2Fe6B2/MgO基p-MTJ自旋阀中隧穿磁电阻比降低的影响。
Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.
作者信息
Takemura Yasutaka, Lee Du-Yeong, Lee Seung-Eun, Chae Kyo-Suk, Shim Tae-Hun, Lian Guoda, Kim Moon, Park Jea-Gun
机构信息
MRAM Center, Department of Electronics, Hanyang University, Seoul, 133-791, Korea. Epitaxial Engineering Department, SUMCO CORPORATION, 1007-62 Izumisawa, Chitose-shi, Hokkaido 066-0051, Japan.
出版信息
Nanotechnology. 2015 May 15;26(19):195702. doi: 10.1088/0957-4484/26/19/195702. Epub 2015 Apr 21.
The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.
当非原位磁退火温度（Tex）从275℃升高到325℃时，与[Co/Pd]n-SyAF层堆叠的基于Co2Fe6B2/MgO的p-MTJ自旋阀的TMR比率迅速下降，并且这种下降与Co2Fe6B2钉扎层的退化有关，而不是与Co2Fe6B2自由层有关。在Tex高于325℃时，非晶Co2Fe6B2钉扎层转变为从[Co/Pd]n-SyAF织构化的面心立方（fcc）晶体层，突然降低了（100）MgO隧道势垒与fcc Co2Fe6B2钉扎层之间垂直自旋扭矩电子的Δ1相干隧穿。
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