Huang Wen-Tsung, Li Yiming
Parallel and Scientific Computing Laboratory, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan ; Institute of Communications Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan.
Parallel and Scientific Computing Laboratory, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan ; Institute of Communications Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan ; Department of Electrical and Computer Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan.
Nanoscale Res Lett. 2015 Mar 11;10:116. doi: 10.1186/s11671-015-0739-0. eCollection 2015.
In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with the realistic process by lithography, of trapezoidal bulk FinFET devices is considered in this study. For RDF on trapezoidal bulk FinFETs under the fixed top-fin width, we explore the impact of geometry and RDF on the on-/off-state current and the threshold voltage (V th) fluctuation with respect to different channel fin angles. For the same channel doping concentration, compared with an ideal FinFET (i.e., device with a right angle of channel fin), the off-state current is large in trapezoidal bulk FinFETs with a small fin angle. Furthermore, the short-channel effect and V th variation degrade as the fin angle is getting smaller. The magnitude of the normalized σV th increases 7% when the fin angle decreases from 90° to 70°.
在这项工作中，我们使用经过实验校准的三维量子力学修正器件模拟，来研究随机掺杂波动（RDF）对16纳米栅梯形体鳍式场效应晶体管（FinFET）器件直流特性的影响。本研究考虑了梯形体FinFET器件固定的顶部鳍宽度，该宽度与光刻的实际工艺一致。对于固定顶部鳍宽度下梯形体FinFET的RDF，我们探讨了几何结构和RDF对不同沟道鳍角的开/关态电流以及阈值电压（Vth）波动的影响。对于相同的沟道掺杂浓度，与理想FinFET（即沟道鳍为直角的器件）相比，鳍角小的梯形体FinFET的关态电流较大。此外，随着鳍角变小，短沟道效应和Vth变化会减弱。当鳍角从90°减小到70°时，归一化σVth的幅度增加7%。
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