Institute of Communication Engineering, National Chiao-Tung University, Hsinchu, Taiwan.
Nanotechnology. 2010 Mar 5;21(9):095203. doi: 10.1088/0957-4484/21/9/095203. Epub 2010 Feb 3.
High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively explores the physics and mechanism of the intrinsic parameter fluctuations in nanoscale fin-type field-effect transistors by using an experimentally validated three-dimensional quantum-corrected device simulation. The dominance fluctuation sources in threshold voltage, gate capacitance and cutoff frequency have been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics; however, its impact is reduced in AC characteristics due to the screening effect of the inversion layer. Additionally, the channel discrete dopant may enhance the electric field and therefore make the averaged cutoff frequency of fluctuated devices larger than the nominal value of cutoff frequency.
高κ/金属栅和垂直通道晶体管是继续进行器件缩放的成熟解决方案。本工作通过使用经实验验证的三维量子修正器件模拟，广泛探究了纳米鳍式场效应晶体管固有参数波动的物理和机制。找到了在阈值电压、栅电容和截止频率中占据主导地位的波动源。新兴的波动源——功函数波动，对直流特性有显著影响；然而，由于反型层的屏蔽效应，其对交流特性的影响会减小。此外，沟道离散掺杂可能会增强电场，从而使波动器件的平均截止频率大于截止频率的标称值。
