Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
Nanoscale. 2015 May 21;7(19):8695-700. doi: 10.1039/c5nr01072a.
MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec(-1), the high ON/OFF ratio of ∼10(8) and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm(2) V(-1) s(-1) suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications.
二硫化钼和其他原子层厚层材料已被证明在缩小尺寸的限制下具有超越硅晶体管的巨大潜力。在这项工作中，我们展示了一个具有低电压和高导通/关断比的 MoS2 晶体管。通过使用超高介电常数 Pb(Zr0.52Ti0.48)O3，获得了创纪录的小等效氧化层厚度约为 1.1nm。低阈值电压（<0.5V）可与液体/凝胶门控 MoS2 晶体管相媲美。小的亚阈值摆幅为 85.9mVdec(-1)，高导通/关断比约为 10(8)，且无迟滞，保证了 MoS2 晶体管在 1V 下的高性能。提取的场效应迁移率为 1-10cm(2)V(-1)s(-1)，表明 CVD 生长的 MoS2 薄片具有较高的晶体质量。二维层状半导体和超高介电常数的结合可能使低功耗电子应用的发展成为可能。
