Iemmo Laura, Urban Francesca, Giubileo Filippo, Passacantando Maurizio, Di Bartolomeo Antonio
Department of Physics 'E.R.Caianello', University of Salerno, Via Giovanni Paolo II, 132-84084 Fisciano (SA), Italy.
CNR-SPIN Institute, Via Giovanni Paolo II, 132-84084 Fisciano (SA), Italy.
Nanomaterials (Basel). 2020 Jan 4;10(1):106. doi: 10.3390/nano10010106.
We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V / μ m at a cathode-anode separation distance of 900 nm .
我们报告了一种基于扫描电子显微镜内压电驱动纳米尖端的简便方法，用于接触并电学表征SiO₂/Si（二氧化硅/硅）衬底上的超薄二硫化钼（MoS₂）薄片。我们应用这种方法来分析用作背栅场效应晶体管沟道的化学气相沉积合成单层MoS₂的电输运和场发射特性。我们研究了栅极电压范围和扫描时间对沟道电流及其滞后行为的影响。我们观察到MoS₂沟道的传导受陷阱态影响。此外，我们报告了来自MoS₂薄片边缘部分的栅极控制场发射电流，在阴极 - 阳极分离距离为900 nm时，场增强因子约为200，开启场约为40 V /μm。
