Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
Chem Soc Rev. 2015 Jun 7;44(11):3691-718. doi: 10.1039/c5cs00106d.
Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
二维(2D)材料近年来引起了极大的兴趣。这类材料可实现多功能电子器件,有望应用于下一代(光)电子学。其电子性质强烈依赖于层数,从基础角度来看非常有趣。对于电子应用,由于通过栅场效应可实现较大的调制,因此具有较大迁移率和较大开/关比的半导体 2D 材料受益于该特性。此外,这些材料机械强度高且柔韧性好,在破裂之前可承受大于 10%的大应变,因此对于应变工程和柔性器件很有吸引力。即使在单层形式下,半导体二维材料也表现出高效的光吸收能力,可实现光电探测器的大响应率。因此,半导体层状 2D 材料是光电应用的有力候选材料,尤其适用于光电探测。在此,我们综述了基于半导体 2D 材料的光电探测器的最新进展,重点介绍了过渡金属二卤化物、新型范德华材料、黑磷和异质结构。