Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China.
ACS Appl Mater Interfaces. 2015 May 13;7(18):9851-7. doi: 10.1021/acsami.5b01779. Epub 2015 May 4.
Cubic boron nitride (cBN) has strong potential for the applications in high-temperature and high-power electronics and deep ultraviolet devices due to its outstanding combined physical and chemical properties. P-type surface transfer doping of heteroepitaxial cBN films was achieved by employing MoO3 and tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) as the surface dopants. The surface conductivities of hydrogenated cBN films increased by 3-6 orders after the deposition of surface dopants. The photoemission spectroscopy (PES) measurements revealed the variation of electronic structures at the interface regions, which suggested that the electron transfer from cBN films to the surface dopants induced hole accumulation at the cBN surface and the increase of surface conductivity. Based on the PES results, the energy level diagrams at MoO3/cBN and F4-TCNQ/cBN interfaces were determined. The achievement provided a potential approach for fabricating cBN-based electronic devices, especially on micrometer and nanometer scales.
立方氮化硼（cBN）具有优异的物理和化学性质，在高温、高功率电子学和深紫外器件中有很大的应用潜力。通过采用 MoO3 和四氟四氰对醌二甲烷（F4-TCNQ）作为表面掺杂剂，实现了异质外延 cBN 薄膜的 p 型表面转移掺杂。表面掺杂剂沉积后，氢化 cBN 薄膜的表面电导率提高了 3-6 个数量级。光电子能谱（PES）测量揭示了界面区域电子结构的变化，表明电子从 cBN 薄膜向表面掺杂剂的转移导致空穴在 cBN 表面积累，从而提高了表面电导率。基于 PES 结果，确定了 MoO3/cBN 和 F4-TCNQ/cBN 界面的能级图。这一成果为制备 cBN 基电子器件提供了一种潜在的方法，特别是在微米和纳米尺度上。
