Xia Ting, Cao Yinghui, Oyler Nathan A, Murowchick James, Liu Lei, Chen Xiaobo
†Department of Chemistry, University of Missouri-Kansas City, Kansas City, Missouri 64110, United States.
‡State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China.
ACS Appl Mater Interfaces. 2015 May 20;7(19):10407-13. doi: 10.1021/acsami.5b01598. Epub 2015 May 6.
Electromagnetic interactions in the microelectronvolt (μeV) or microwave region have numerous important applications in both civil and military fields, such as electronic communications, signal protection, and antireflective coatings on airplanes against microwave detection. Traditionally, nonmagnetic wide-bandgap metal oxide semiconductors lack these μeV electronic transitions and applications. Here, we demonstrate that these metal oxides can be fabricated as good microwave absorbers using a 2D electron gas plasma resonance at the disorder/order interface generated by a hydrogenation process. Using ZnO and TiO2 nanoparticles as examples, we show that large absorption with reflection loss values as large as -49.0 dB (99.99999%) is obtained in the microwave region. The frequency of absorption can be tuned with the particle size and hydrogenation condition. These results may pave the way for new applications for wide bandgap semiconductors, especially in the μeV regime.
微电子伏特（μeV）或微波频段的电磁相互作用在民用和军事领域都有众多重要应用，如电子通信、信号保护以及飞机上用于防止微波探测的抗反射涂层。传统上，非磁性宽带隙金属氧化物半导体缺乏这些微电子伏特电子跃迁及相关应用。在此，我们证明这些金属氧化物可通过氢化过程在无序/有序界面处利用二维电子气等离子体共振制备成优良的微波吸收体。以氧化锌（ZnO）和二氧化钛（TiO2）纳米颗粒为例，我们展示了在微波频段可实现高达 -49.0 dB（99.99999%）反射损耗值的大吸收。吸收频率可通过颗粒尺寸和氢化条件进行调节。这些结果可能为宽带隙半导体的新应用铺平道路，特别是在微电子伏特领域。
