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用于双电层电容器的高表面积氮掺杂还原氧化石墨烯

High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

作者信息

Youn Hee-Chang, Bak Seong-Min, Kim Myeong-Seong, Jaye Cherno, Fischer Daniel A, Lee Chang-Wook, Yang Xiao-Qing, Roh Kwang Chul, Kim Kwang-Bum

机构信息

Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Republic of Korea).

Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973 (USA).

出版信息

ChemSusChem. 2015 Jun 8;8(11):1875-84. doi: 10.1002/cssc.201500122. Epub 2015 Apr 27.

DOI:10.1002/cssc.201500122
PMID:25916491
Abstract

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

摘要

采用一种两步法制备氮掺杂还原氧化石墨烯(N-RGO),该方法包括固态微波辐照和在氨气气氛下进行热处理,所制备的N-RGO具有高比表面积(1007 m² g⁻¹)、高电导率(1532 S m⁻¹)以及低氧含量(1.5 wt%),可用于双电层电容器应用。在1 A g⁻¹的电流密度下,N-RGO的比电容为291 F g⁻¹,在50 A g⁻¹时仍保留261 F g⁻¹的电容,这表明其倍率性能非常好。N-RGO还表现出优异的循环稳定性,在100000次循环后仍保留初始比电容的96%。近边X射线吸收精细结构光谱结果为随着含氧基团的去除碳网络中π共轭的恢复提供了证据,并揭示了N-RGO中氮原子的化学键合。N-RGO良好的电化学性能归因于其高比表面积、高电导率和低氧含量。

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