Department of Physics and TcSUH, University of Houston, Houston, TX 77204, USA.
Nanoscale. 2015 May 28;7(20):9153-7. doi: 10.1039/c5nr00242g.
We report on epitaxial growth of Au nanotriangles (AuNTs) and bowties consisting of opposing tip-to-tip AuNTs with a few-nanometer gap on n-layer MoS2. These AuNTs exhibit well-defined crystallographic orientations with the average size determined by the MoS2 thickness. Monolayer (1L) MoS2 shows the weakest coalescence, corroborating the layer-dependent interactions among Au and n-layer MoS2. High-resolution transmission electron microscopy characterization confirms the lattice directing of thin MoS2 sheets on the AuNT formation with [111]Au||[001]MoS2 and <211>Au||<210>MoS(2). By introducing misfit dislocation arrays, the system with an 8.8% lattice misfit is stress-free. In particular, subwavelength-sized gold bowtie nanoantennas can be easily found on the MoS2 surface with a spacing gap down to 3 nm and a density up to 1.6 × 10(13) m(-2). This technique is low cost, time-saving and free of impurities compared to the conventional lithography technologies. Meanwhile, the equilateral AuNTs can enhance Raman signals of thin MoS2 sheets far stronger than that by ordinary gold films, indicating the potential use of AuNTs as SERS substrates for SERS applications.
我们报告了在 n 层 MoS2 上通过几个纳米间隙的尖端对尖端相反的 Au 纳米三角形(AuNTs)和蝶形结构的外延生长。这些 AuNTs 表现出明确的晶体取向,平均尺寸由 MoS2 厚度决定。单层(1L)MoS2 显示出最弱的融合,这证实了 Au 与 n 层 MoS2 之间的层依赖相互作用。高分辨率透射电子显微镜表征证实了薄 MoS2 片在 AuNT 形成中的晶格引导作用,[111]Au||[001]MoS2 和 <211>Au||<210>MoS(2)。通过引入失配位错阵列,晶格失配率为 8.8%的系统是无应力的。特别是,在 MoS2 表面上可以很容易地找到亚波长尺寸的金蝶形纳米天线,其间距间隙低至 3nm,密度高达 1.6×10(13)m(-2)。与传统的光刻技术相比,这种技术成本低、耗时少且无杂质。同时,等边 AuNTs 可以增强薄 MoS2 片的拉曼信号,比普通金膜强得多,这表明 AuNTs 作为 SERS 基底在 SERS 应用中的潜在用途。